View BYT77_559821.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

VISHAY
BYT77.BYT78
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
\
Features
* * * * * Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Controlled avalanche characteristics
Applications
Fast "soft recovery" rectification diode
Mechanical Data
Case: Sintered glass case, SOD 64 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 860 mg, (max. 1000 mg)
949588
Parts Table
Part BYT77 BYT78 Type differentiation VR = 800 V; IFAV = 3 A VR = 1000 V; IFAV = 3 A SOD64 SOD64 Package
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Test condition see electrical characteristics see electrical characteristics Peak forward surge current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A tp = 10 ms, half sinewave Tamb 45 C Sub type BYT77 BYT78 Symbol VR = VRRM VR = VRRM IFSM IFAV Tj = Tstg ER Value 800 1000 100 3 - 55 to +175 10 Unit V V A A C mJ
Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant on PC board with spacing 25 mm Sub type Symbol RthJA RthJA Value 25 70 Unit K/W K/W
Document Number 86034 Rev. 6, 07-Jan-03
www.vishay.com 1
BYT77.BYT78
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Reverse recovery time IF = 3 A VR = VRRM VR = VRRM, Tj = 150 C IF = 0.5 A, IR = 1 A, iR = 0.25 A Test condition Sub type Symbol VF IR IR trr Min Typ. 1.0 1 60
VISHAY
Max 1.2 5 150 250
Unit V A A ns
Typical Characteristics (Tamb = 25 C unless otherwise specified)
R thJA - Therm. Resist. Junction / Ambient ( K/W )
40
100.000
30
I F - Forward Current ( A)
10.000 Tj=175C Tj=25C 1.000 0.100 0.010 0.001
20 l 10 l
0 0 5 10 15
TL=constant 20 25 30 l - Lead Length ( mm )
0.0
16370
0.5
1.0
1.5
2.0
2.5
94 9466
VF - Forward Voltage ( V )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 3. Forward Current vs. Forward Voltage
240
T j - Junction Temperature ( C )
3.5
200 VRRM 160 120 80 RthJA=70K/W 40 0 0 200 400 600 800 1000 VR
I FAV - Average Forward Current ( A )
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 RthJA=70K/W PCB d=25mm
VR=VRRM half sinewave RthJA=25K/W l=10mm
80 100 120 140 160 180
94 9467
Reverse / Repetitive Peak Reverse Voltage ( V )
16371
Tamb - Ambient Temperature ( C )
Figure 2. Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage
Figure 4. Max. Average Forward Current vs. Ambient Temperature
www.vishay.com 2
Document Number 86034 Rev. 6, 07-Jan-03
VISHAY
BYT77.BYT78
Vishay Semiconductors
1000 VR = VRRM
CD - Diode Capacitance ( pF ) IR - Reverse Current ( mA )
90 80 70 60 50 40 30 20 10 f=1MHz
100
10
1 25
16372
0 50 75 100 125 150 Tj - Junction Temperature ( C ) 175
16374
0.1
1.0 10.0 VR - Reverse Voltage ( V )
100.0
Figure 5. Reverse Current vs. Junction Temperature
Figure 7. Diode Capacitance vs. Reverse Voltage
450
PR - Reverse Power Dissipation ( mW )
400 350 300 250 200 150 100 50 0 25 50 75 100 PR-Limit @80%VR
VR = VRRM
PR-Limit @100%VR
125
150
175
16373
Tj - Junction Temperature ( C )
Figure 6. Max. Reverse Power Dissipation vs. Junction Temperature
Package Dimensions in mm
Sintered Glass Case SOD 64 Weight max. 1.0g Cathode Identification 4.3 max.
technical drawings according to DIN specifications
1.35 max.
26 min.
4.2 max.
26 min.
94 9587
Document Number 86034 Rev. 6, 07-Jan-03
www.vishay.com 3
BYT77.BYT78
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com 4
Document Number 86034 Rev. 6, 07-Jan-03

▲Up To Search▲

Price & Availability of BYT77

	To Download BYT77 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .